Method of production pitch fractionizations in semiconductor technology
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 6, 2007
Grant Date -
Feb 1, 2007
app pub date -
Aug 1, 2005
filing date -
Aug 1, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Spacers are formed on sidewalls of striplike parts of a pattern layer of periodic structure. The pattern layer is removed, and the spacers are covered with a further spacer layer, which is then structured to second sidewall spacers. Gaps between the spacers are filled with a complementary layer. The upper surface is planarized to a lower surface level, leaving a periodic succession of the first spacers, the second spacers and the residual parts of the complementary layer. The lateral dimensions are adapted in such a manner that a removal of one or two of the remaining layers renders a periodic pattern of smaller pitch.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully