Sacrificial inorganic polymer intermetal dielectric damascene wire and via liner
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United States of America Patent
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Oct 30, 2007
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app pub date -
Nov 13, 2006
filing date -
Jan 14, 2004
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Abstract
The present invention provides a method of forming a rigid interconnect structure, and the device therefrom, including the steps of providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing an upper low-k dielectric atop the lower metal wiring layer; etching at least one portion of the upper low-k dielectric to provide at least one via to the first metal lines; forming rigid dielectric sidewall spacers in at least one via of the upper low-k dielectric; and forming second metal lines in at least one portion of the upper low-k dielectric. The rigid dielectric sidewall spacers may comprise of SiCH, SiC, SiNH, SiN, or SiO.sub.2. Alternatively, the via region of the interconnect structure may be strengthened with a mechanically rigid dielectric comprising SiO.sub.2, SiCOH, or doped silicate glass.
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