Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
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United States of America Patent
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Oct 30, 2007
Grant Date -
Mar 3, 2005
app pub date -
Jul 2, 2004
filing date -
Aug 29, 2003
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Abstract
The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P1 (atm(.times.1.013.times.10.sup.5 Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I): P.ltoreq.P1<(P+45), (I) where in the expression (I), P (atm(.times.1.013.times.10.sup.5 Pa)) denotes the minimum pressure that is required for generating GaN crystals at a temperature T.degree. C. of the mixed melt.
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