Method of manufacturing a semiconductor light-emitting device
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United States of America Patent
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Oct 23, 2007
Grant Date -
Jan 20, 2005
app pub date -
Aug 17, 2004
filing date -
Sep 13, 2001
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Abstract
A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an Al.sub.xGa.sub.1-xAs layer and the active layer, in this order. Part of the Al.sub.xGa.sub.1-xAs layer with respect to the is changed into an AlO.sub.y layer (where y is a positive real number).
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