Method of measuring semiconductor wafers with an oxide enhanced probe
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United States of America Patent
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Oct 16, 2007
Grant Date -
Oct 5, 2006
app pub date -
Apr 5, 2005
filing date -
Apr 5, 2005
priority date (Note) -
Expired
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Abstract
A method of measuring at least one electrical property of a semiconductor wafer includes providing an elastically deformable and electrically conductive contact having an insulative oxide layer formed on an exterior surface thereof by a controlled oxidation process, such as, without limitation, thermal oxidation, anodic oxidation or deposition oxidation. A first electrical contact is formed between the oxide layer on the surface of the contact and a dielectric layer overlaying a top surface of the semiconductor wafer and a second electrical contact is formed with the semiconductor wafer. A CV type stimulus is applied between the first electrical contact and the second electrical contact. A response of the semiconductor wafer to the CV type stimulus is measured and at least one electrical property of the dielectric layer, the semiconductor wafer or both is determined from the response.
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