Semiconductor device
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United States of America Patent
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Oct 16, 2007
Issued Date -
N/A
app pub date -
Jul 6, 2006
filing date -
Jan 7, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device having high ruggedness is provided. The distance Wm.sub.2 between buried regions, positioned at the bottoms of different base diffusion regions and face each other, is set smaller than the distance Wm.sub.1 between buried regions positioned at the bottom of the same base diffusion region (Wm.sub.1>Wm.sub.2). An avalanche breakdown occurs under the bottom of the base diffusion region, and the avalanche current is not passed through a high resistance part immediately under the source diffusion region in the base diffusion region, thereby providing high withstand strength against destruction.
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