Current-mode sensing structure of high-density multiple-port register in embedded flash memory procedure and method for the same
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United States of America Patent
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Oct 9, 2007
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N/A
app pub date -
May 31, 2006
filing date -
May 31, 2006
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Abstract
A current-mode sensing structure of a high-density multiple-port register in embedded flash memory procedure and a method for the same are proposed. A multiple-port register file cell is used to send out a select signal of '0' or '1'. Based on this select signal, a turn-on voltage and a cell current are output. Next, a dummy bit line of an embedded dummy flash cell is used to define a reference voltage according to the turn-on voltage and generate a corresponding reference current. Finally, the cell current and the reference current are sent to a current comparator amplifier, which senses and outputs a difference value between the cell current and the reference current to perform session at once (SAO) recording. Because the difference value has only two possibilities: the reference current or its negative, the sensing time of the current comparator amplifier can be shortened.
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