Closed cell trench metal-oxide-semiconductor field effect transistor
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United States of America Patent
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Oct 9, 2007
Issued Date -
N/A
app pub date -
Dec 2, 2003
filing date -
Dec 2, 2003
priority date (Note) -
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Abstract
Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plurality of source regions disposed at the surface of the body region proximate to the periphery of the gate insulator region. A first portion of the gate region and the gate oxide region are formed as parallel elongated structures. A second portion of the gate region and the oxide region are formed as normal-to-parallel elongated structures. A portion of the gate and drain overlap region are selectively blocked by the body region, resulting in lower overall gate to drain capacitance.
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