Methods and apparatus for forming precursors
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United States of America Patent
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Oct 9, 2007
Grant Date -
Aug 5, 2004
app pub date -
Apr 4, 2002
filing date -
Apr 7, 2001
priority date (Note) -
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Abstract
This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to react with the ions to form the precursor.
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