Methods of forming a P-well in an integrated circuit device
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United States of America Patent
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Sep 25, 2007
Grant Date -
Feb 2, 2006
app pub date -
Jul 27, 2004
filing date -
Jul 27, 2004
priority date (Note) -
Expired
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Abstract
The present invention is generally directed to a method of forming a p-well in an integrated circuit device. In one illustrative embodiment, the method comprises forming a first layer of epitaxial material above an active layer of a substrate, forming a first doped region in the first layer of epitaxial material, forming a second layer of epitaxial material above the first layer of epitaxial material, forming a second doped region in the second layer of epitaxial material, and performing at least one heat treating process.
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