Method for fabricating a semiconductor having a field zone
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United States of America Patent
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Sep 11, 2007
Grant Date -
Mar 9, 2006
app pub date -
Aug 19, 2005
filing date -
Aug 20, 2004
priority date (Note) -
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Abstract
A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.
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