Wide-band high-gain limiting amplifier with parallel resistor-transistor source loads
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United States of America Patent
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Sep 4, 2007
Grant Date -
Jan 11, 2007
app pub date -
Jul 6, 2005
filing date -
Jul 6, 2005
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Abstract
An amplifier has a wide bandwidth and a high gain by using parallel loads. Each load has a load resistor and a load p-channel transistor in parallel. The drain voltages of differential n-channel transistors can be set by the load resistors, while switching current is provided by the load p-channel transistors. The parallel load provides a high impedance to the drain nodes yet still provides driving current. A transconductance stage with a pair of differential transistors and two parallel loads drives a shunt-shunt-feedback stage that has another pair of differential transistors and two more parallel loads. Shunt resistors between the gate and drain of the differential transistors in the shunt-shunt-feedback stage provide shunt feedback and low impedance. Several pairs of transconductance and shunt-shunt-feedback stages can be cascaded together. The cascaded amplifier may be used as a signal repeater.

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- 15 United States
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Patent Owner(s)
Patent Owner | Address | |
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DIODES INCORPORATED | 4949 HEDGCOXE ROAD SUITE 200 PLANO TX 75024 |
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Liu, Wing Faat | San Jose, CA | 6 | 59 |
Zhang, Michael Y | Palo Alto, CA | 29 | 389 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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