Semiconductor device, and method and apparatus for manufacturing semiconductor device
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United States of America Patent
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Aug 28, 2007
Grant Date -
Apr 22, 2004
app pub date -
Mar 21, 2001
filing date -
Dec 25, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A high frequency power amplifying device has two amplifying lines. Each amplifying line has a configuration in which a plurality of amplifying stages are connected in cascade having two source voltage terminals, of which one is connected to the first amplifying stage of one amplifying line and to the remaining amplifying stages of the other amplifying line, and the other, to the first amplifying stage of the latter amplifying line and to the remaining amplifying stages of the former amplifying line. An air core coil with a low D.C. resistance, formed by spirally winding a copper wire of about 0.1 mm in diameter, is connected in series between the final amplifying stage of each amplifying line and the source voltage terminal.
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