Non-volatile memory device, and multi-page program, read and copyback program method thereof

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United States of America Patent

PATENT NO 7257027
APP PUB NO 20070002621A1
SERIAL NO

11295887

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Abstract

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A NAND-type flash memory device has a multi-plane structure. Page buffers are divided into even page buffers and odd page buffers and are driven at the same time. Cells connected to even bit lines within one page and cell connected to odd bit lines within one page are programmed, read and copyback programmed at the same time.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Park, Jin Su Daegu-si, KR 65 981

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