Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry
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United States of America Patent
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Aug 14, 2007
Grant Date -
May 10, 2007
app pub date -
Dec 26, 2006
filing date -
Jun 15, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed polarity of the bit when a first current is applied thereto, and to direct the polarity of the bit when a second larger current is applied thereto in a given direction. The bit (19) has a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height.
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