Production method for semiconductor device
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United States of America Patent
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Aug 14, 2007
Grant Date -
Dec 2, 2004
app pub date -
Sep 10, 2002
filing date -
Sep 10, 2001
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film, silicon nitride film or silicon oxide nitride film or the like on a silicon oxide substrate, and following formation of the gate insulation film on the silicon oxide substrate with heat treatment for a given time at a temperature range of 900.degree. C. to 1000.degree. C. in an atmosphere containing not less than 25% H.sub.2O (water).
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