Systems and methods for synthesis of gallium nitride powders
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United States of America Patent
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Aug 14, 2007
Grant Date -
Oct 27, 2005
app pub date -
Nov 24, 2004
filing date -
Nov 24, 2003
priority date (Note) -
Expired
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Abstract
A method of producing high quality GaN powder by combining high purity gallium and high purity ammonia in a tube reactor under controlled conditions. A reaction between the ammonia and gallium under the controlled conditions produces a porous gallium melt and to a full reaction, yielding high purity crystalline GaN powders with a stoichiometric nitrogen concentration and a hexagonal wurtzite structure.
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