Bipolar transistor with geometry optimized for device performance, and method of making same
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United States of America Patent
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Aug 7, 2007
Grant Date -
Jan 12, 2006
app pub date -
Jul 6, 2004
filing date -
Jul 6, 2004
priority date (Note) -
Expired
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Abstract
The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a continuous emitter region formed within the intrinsic base region, the emitter region having a plurality of substantially hexagonal shaped openings defined therein, and a plurality of extrinsic base regions formed in the substrate, wherein each of the extrinsic base regions is positioned within an area defined by one of the plurality of substantially hexagonal shaped openings.
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