Characterization of ultra shallow junctions in semiconductor wafers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 24, 2007
Grant Date -
Dec 16, 2004
app pub date -
Mar 8, 2004
filing date -
Jun 10, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
To measure USJ profile abruptness, a PMR-type optical metrology tool is to perform a series of two or more measurements, each with different pump/probe beam separations. Quadrature (Q) and in-phase (I) measurements are obtained for each measurement and used to derive a line in I-Q space. An abruptness measurement is derived by comparing the line slope to a similar line slope obtained for a sample having a known USJ profile. USJ profile depth is measured by obtaining quadrature (Q) values for one or more measurements. Each Q value is translated to a corresponding depth measurement using a table or similar lookup device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully