Fingerprint recognition sensor and manufacturing method thereof

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United States of America Patent

PATENT NO 7248298
APP PUB NO 20020027605A1
SERIAL NO

09738986

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Abstract

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A method for manufacturing a fingerprint recognition sensor is provided. The method includes providing a CMOS sensor; depositing a transparent electrode layer as a thin film on the upper portion of the CMOS image sensor, to which a terminal of an AC power source is connected, the transparent electrode layer being made of a transparent insulating material and a transparent conductive material; forming a luminescent layer at the upper portion of the transparent electrode layer to generate a light image; forming a dielectric layer at the upper portion of the luminescent layer; and forming a contamination-resistance film at the upper portion of the dielectric layer. With this method, since the CMOS image sensor is utilized, circuit construction can be simplified. In addition, a fingerprint image having a good contrast can be obtained.

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Patent Owner(s)

Patent OwnerAddress
IB KOREA LTDSUNTECH-CITY1 9TH FLOOR # 910 513-15 SANGDAEWON 1-DONG JUNGWON-GU SEONGNAM-SI GYEONGGI-DO 462-725

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Ju Hyun Choongchungnam-do, KR 89 267

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