Apparatus for pulling single crystal by CZ method
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United States of America Patent
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Jul 17, 2007
Grant Date -
Dec 8, 2005
app pub date -
Jun 7, 2005
filing date -
Feb 1, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
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