Processing method for annealing and doping a semiconductor
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United States of America Patent
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Jul 10, 2007
Grant Date -
Jul 21, 2005
app pub date -
Feb 14, 2005
filing date -
Mar 26, 2002
priority date (Note) -
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Abstract
A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be doped with the laser beam (a'), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.
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