Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device
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United States of America Patent
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Jun 26, 2007
Grant Date -
Sep 8, 2005
app pub date -
Feb 24, 2005
filing date -
Mar 4, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Setting a polishing rate and a polishing time in chemical mechanical polishing can be performed with high accuracy by considering a product wafer of an object to be polished, and an instrumental error between apparatuses to be used, etc. By using, as a calculating formula, a formula well approximating a portion of a curve representing a state of chemical mechanical polishing on a side showing a target polishing amount, the polishing rate and the polishing time can be set with high accuracy according to a state of chemical mechanical polishing for actually polishing a product wafer. In the calculating formula, a parameter 'A' relating to a film property of a film of an object to be polished, a parameter 'B' relating to a roughness state of a film surface, and a parameter 'C' relating to an instrumental error differential between apparatuses of a chemical mechanical polishing apparatus are joined by operators.
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