Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy
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United States of America Patent
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Jun 26, 2007
Grant Date -
Apr 1, 2004
app pub date -
Oct 12, 2001
filing date -
Oct 13, 2000
priority date (Note) -
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Abstract
An apparatus (295) using specular reflection spectroscopy to measure a temperature of a substrate (135). By reflecting light (100) from a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the substrate. This in situ apparatus can be used as a feedback control in combination with a variable temperature substrate holder to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites, the variation of the temperature across the substrate can also be measured.
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