Method for making an epitaxial germanium temperature sensor
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United States of America Patent
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Jun 19, 2007
Grant Date -
Nov 4, 2004
app pub date -
Nov 9, 2001
filing date -
Jul 15, 1998
priority date (Note) -
Expired
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Abstract
A method of making a highly sensitive epitaxial germanium low temperature sensor that is superior in the method of production and performance than those currently available. The geometry and sensitivity of the sensor can be tuned to desired temperature ranges, and specifically can operate at cryogenic temperatures. The sensor can be manufactured uniformly and reproducibly in large quantities at relatively low cost in which large area arrays are possible. The applications of the sensors range from conventional low temperature thermometry and control in laboratory and industrial settings, to applications associated with infrared, x-ray, particle and plasma physics and spectroscopy.
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