Image sensors and methods of manufacturing the same
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United States of America Patent
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May 29, 2007
Grant Date -
Jul 15, 2004
app pub date -
Dec 23, 2003
filing date -
Dec 31, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
Image sensors and methods of manufacturing an image sensor are disclosed. A disclosed photo diode may receive short wavelength light in its depletion region without exhibiting defective phenomenon such as noise and dark current. In the illustrated example, this performance is achieved by forming a trench type light-transmission layer to occupy a major surface of the photo diode so as to reduce the area available for defects on the surface of the semiconductor substrate. As a result of this reduction, the depletion region formed upon the operation of the sensor may extend toward the surface of the semiconductor substrate without concern for defects. The image sensor may be manufactured without forming a blocking layer in connection with a silicide layer.
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