Self-aligned small contact phase-change memory method and device
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United States of America Patent
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May 22, 2007
Grant Date -
Jun 15, 2006
app pub date -
Dec 9, 2004
filing date -
Dec 9, 2004
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Abstract
The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalcogenide memory. Particular aspects of the present invention are described in the claims, specification and drawings.
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