Photoresist compositions
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United States of America Patent
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May 22, 2007
Grant Date -
Nov 27, 2003
app pub date -
Mar 1, 2003
filing date -
Mar 1, 2002
priority date (Note) -
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Abstract
New photoresists are provided that are suitable for short wavelength imaging, including sub-300 nm and sub-200 nm such as 193 nm and 157 nm. Photoresists of the invention contain a resin with photoacid-labile groups, one or more photoacid generator compounds, and an adhesion-promoting additive compound. Photoresists of the invention can exhibit significant adhesion to SiON and other inorganic surface layers.
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