Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
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United States of America Patent
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May 22, 2007
Grant Date -
Jul 15, 2004
app pub date -
Nov 7, 2003
filing date -
Nov 8, 2002
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Abstract
A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixture in the reaction vessel, wherein the step of growing the crystal of the group III nitride is conducted while controlling an increase rate of degree of supersaturation of a group III nitride component in the melt mixture in a surface region of the melt mixture.
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