Metallic nanowire interconnections for integrated circuit fabrication

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United States of America Patent

PATENT NO 7217650
SERIAL NO

10816576

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Abstract

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A method for fabricating an electrical interconnect between two or more electrical components. A conductive layer is provided on a substarte and a thin, patterned catalyst array is deposited on an exposed surface of the conductive layer. A gas or vapor of a metallic precursor of a metal nanowire (MeNW) is provided around the catalyst array, and MeNWs grow between the conductive layer and the catalyst array. The catalyst array and a portion of each of the MeNWs are removed to provide exposed ends of the MeNWs.

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Patent Owner(s)

Patent OwnerAddress
USA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONWASHINGTON DC 20546

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Jun Sunnyvale, CA 1363 17735
Meyyappan, Meyya San Jose, CA 43 481
Ng, Hou Tee Mountain View, CA 11 408

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