Semiconductor memory component in cross-point architecture
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United States of America Patent
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May 8, 2007
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N/A
app pub date -
Apr 27, 2005
filing date -
Apr 27, 2004
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Abstract
A programmable metallization memory cell with a storage region (3) formed from a chalcogenide glass and an electrode (4) which is preferably silver is located at the crossing point of a respective bit line (1) and a respective word line (2). There is a pn junction between the bit lines (1) and the chalcogenide glass.
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