Phase change memory cell with high read margin at low power operation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 8, 2007
Issued Date -
N/A
app pub date -
Apr 8, 2005
filing date -
Feb 10, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material into the isolation material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully