Method for fabricating a semiconductor memory cell
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United States of America Patent
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May 8, 2007
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N/A
app pub date -
Mar 9, 2005
filing date -
Mar 9, 2004
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Abstract
Semiconductor memory cell and also a corresponding fabrication method are described, in which a first or bottom electrode device of the memory element of the semiconductor memory cell according to the invention and the gate electrode device of the underlying field effect transistor as selection transistor of the semiconductor memory cell are formed as the same material region or with a common material region.
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