Method of manufacturing piezoelectric thin film device and piezoelectric thin film device
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United States of America Patent
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May 1, 2007
Grant Date -
Feb 16, 2006
app pub date -
Dec 17, 2004
filing date -
Dec 19, 2003
priority date (Note) -
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Abstract
Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the specific chemical substance through the via hole.
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