Forming low k dielectric layers
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United States of America Patent
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Apr 17, 2007
Grant Date -
Jul 3, 2003
app pub date -
Nov 18, 2002
filing date -
Nov 16, 2001
priority date (Note) -
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Abstract
A low k dielectric layer is formed by depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the dielectric layer exposed to an activated gas to form a semi-permeable skin on or of the surface of the layer. The layer is then cured to render at least part of the layer porous.
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