Method of forming a diffusion barrier
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United States of America Patent
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Apr 10, 2007
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N/A
app pub date -
Sep 22, 2004
filing date -
Dec 11, 2001
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Abstract
A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
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