Semiconductor device and method of manufacturing the same
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United States of America Patent
Stats
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Apr 3, 2007
Grant Date -
Oct 2, 2003
app pub date -
Mar 27, 2003
filing date -
Apr 2, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device capable of reducing its size and increasing the number of chips on a wafer, and a method of manufacturing the same are provided. When manufacturing a semiconductor device, an uppermost layer as a dedicated layer for pads are formed above a layer in which power supply/ground wiring lines and wiring lines for supplying associated control signals to a memory cell unit and a control circuit are formed. The uppermost layer of the semiconductor device is comprised only of a plurality of pads 11 as an electrode for providing electrical connection with an external connection line for transmitting a signal to and from the semiconductor device, a plurality of contact holes 12 for providing electrical connection with lower wiring lines formed in a lower layer below the uppermost layer, and uppermost wiring lines 13 for connecting the plurality of pads 11 to the plurality of contact holes 12 correspondingly. In this case, the layout of the plurality of pads is made common regardless of the type of product.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
UMC JAPAN | 1580 YAMAMOTO TATEYAMA-SHI CHIBA-KEN |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Shigeta, Shinobu | Tateyama, JP | 5 | 31 |
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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