Dual wavelength semiconductor laser emitting apparatus and manufacturing method thereof
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United States of America Patent
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Feb 27, 2007
Grant Date -
Nov 3, 2005
app pub date -
Sep 28, 2004
filing date -
Apr 30, 2004
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Abstract
A dual wavelength semiconductor laser emitting apparatus including a substrate having a first laser emitting device and a second laser emitting device, and a manufacturing method thereof are provided. The manufacturing method includes stacking an active layer of the second laser emitting device onto an upper cladding layer of the first laser emitting device, which is taken as a lower cladding layer of the second laser emitting device. Thereby the first laser emitting device and the second laser emitting device formed on the substrate possess a common electrode and respectively oscillate laser beams having different wavelengths in the semiconductor laser emitting apparatus.
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