Method of plasma processing
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United States of America Patent
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Feb 27, 2007
Grant Date -
N/A
app pub date -
Dec 21, 1999
filing date -
Dec 28, 1998
priority date (Note) -
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Abstract
An SiO.sub.2 film layer formed at a wafer placed inside a process chamber of an etching device is etched by generating plasma from a process gas containing fluorocarbon which has been introduced into the process chamber. The contents of an etchant and the byproducts are measured through infrared laser absorption analysis. The individual contents thus measured are compared with the contents of the etchant and the byproducts in the plasma corresponding to the increase in the aspect ratio of a contact hole set in advance. The quantity of O.sub.2 added into the process gas is adjusted to match the measured contents with the predetermined contents. The quantity of O.sub.2 added into the process gas is continuously increased as the aspect ratio becomes higher. As a result, a contact hole is formed at the SiO.sub.2 film layer without damaging the photoresist film layer or inducing an etch stop.
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