Shadow mask and method for producing a shadow mask
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United States of America Patent
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Feb 27, 2007
Grant Date -
Nov 4, 2004
app pub date -
Aug 14, 2001
filing date -
Aug 14, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 .mu.m to about 200 .mu.m and apertures in the shadow mask have lateral dimensions from about 0.5 .mu.m to about 3 .mu.m.
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