Manufacturing CCDs in a conventional CMOS process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 20, 2007
Grant Date -
Sep 28, 2006
app pub date -
Mar 28, 2005
filing date -
Mar 28, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A technique for forming Charge-Coupled Devices (CCDs) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is used to selectively dope the gates while preventing doping of the silicon in the gaps. Masking may likewise be used to selectively silicide the gates while preventing silicide formation in the gaps. Conventional source-drain processing produces input/output diffusions for the CCD.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully