Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device
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United States of America Patent
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Feb 13, 2007
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app pub date -
Jun 19, 2003
filing date -
Aug 22, 2002
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Abstract
An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300.degree. C. to 500.degree. C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.
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