Anti-reflection coatings for semiconductor lasers
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United States of America Patent
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Feb 6, 2007
Grant Date -
Aug 5, 2004
app pub date -
Dec 12, 2003
filing date -
Nov 6, 2001
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Abstract
The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiN.sub.x:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiN.sub.x:H whose density approaches the density of crystalline Si.sub.3N.sub.4.
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