Optical element and method for its manufacture as well as lithography apparatus and method for manufacturing a semiconductor device
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United States of America Patent
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Feb 6, 2007
Grant Date -
Dec 16, 2004
app pub date -
Oct 2, 2002
filing date -
Oct 4, 2001
priority date (Note) -
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Abstract
In order to reduce contamination of optical elements which comprise a multilayer system on a substrate, it is proposed that the layer material and/or the layer thickness of at least one layer of the multilayer system are/is selected such that the standing wave which forms during reflection of the irradiated operating wavelength, forms a node of the electrical field intensity (node condition) in the area of the free interface of the multilayer system. Furthermore, a method for determining a design of a multilayer system, as well as a manufacturing process and a lithography apparatus are described.
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