Method of producing a calibration wafer
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United States of America Patent
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Jan 30, 2007
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app pub date -
Nov 13, 2003
filing date -
Nov 26, 2002
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Abstract
A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.
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