Method of forming metallic wiring layer, method of selective metallization, apparatus for selective metallization and substrate apparatus
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United States of America Patent
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Jan 30, 2007
Grant Date -
Oct 13, 2005
app pub date -
Mar 7, 2003
filing date -
Mar 19, 2002
priority date (Note) -
Expired
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Abstract
A method of forming a metallic wiring layer in a selected region of a layer-stacked plate, which includes the first process of introducing gas consisting of organometallic molecules into a reaction chamber having a layer-stacked plate arranged therein, and forming an adsorbed molecular layer composed of the organometallic molecules on the layer-stacked plate; the second process of reducing the concentration of the gas in the reaction chamber or exhausting the reaction chamber, after forming the adsorbed molecular layer; the third process of carrying a light irradiation against a selected region on the layer-stacked plate; the fourth process of removing the adsorbed molecular layer formed in the region other than the selected region, from the layer-stacked plate; and the fifth process of forming a metallic film in the selected region.
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