Varactor with improved tuning range
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United States of America Patent
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Jan 30, 2007
Grant Date -
Jul 10, 2003
app pub date -
Jan 7, 2002
filing date -
Jan 7, 2002
priority date (Note) -
Expired
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Abstract
A varactor has a plurality of alternating P- wells and N+ regions formed in a silicon layer. Each of the P- wells forms a first N+/P- junction with the N+ region on one of its side and a second N+/P- junction with the N+ region on the other of its sides. A gate oxide is provided over each of the P- wells, and a gate silicon is provided over each of the gate oxides. The potential across the gate silicons and the N+ regions controls the capacitance of the varactor.
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