Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives

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United States of America Patent

PATENT NO 7169531
APP PUB NO 20050170279A1
SERIAL NO

10974726

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Abstract

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A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGGERMAN LAURA KAN ANG 1-12 PYRENE EBY BERG CITY NO NEUBIBERG BAVARIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dammel, Ralph Flemington, NJ 33 347
Hohle, Christoph Bubenreuth, DE 18 265
Houlihan, Michael Francis Millington, NJ 1 2

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