Methods for plasma etching of silicon
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United States of America Patent
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Jan 23, 2007
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N/A
app pub date -
Mar 16, 2000
filing date -
Apr 29, 1999
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Abstract
A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF.sub.3, BrF.sub.3, or IF.sub.5 is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF.sub.3 is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H.sub.2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.
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