Method of fabricating deep trench capacitor
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United States of America Patent
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Jan 16, 2007
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N/A
app pub date -
Nov 12, 2004
filing date -
Sep 9, 2004
priority date (Note) -
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Abstract
A method of fabrication deep trench capacitors includes forming a plurality of deep trenches in a substrate. A bottom electrode is formed in the substrate surrounding the bottom of each deep trench. A capacitor dielectric layer and a first conductive layer are formed at the bottom of each deep trench. A collar oxide layer is formed on the sidewall of the deep trench exposed by the first conductive layer. A second conductive layer fills each deep trench. An opening is formed in a region predetermined for an isolation structure between adjacent deep trenches, wherein the depth of the opening is greater than that of the isolation structure. An isolation layer is filled in the opening.
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